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| D G S TO-247 ARF460A ARF460B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 150W 65MHz The ARF460A and ARF460B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 125 Volt, 40.68 MHz Characteristics: * Output Power = 150 Watts. * Gain = 13dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. All Ratings: TC = 25C unless otherwise specified. ARF460A/B UNIT Volts 500 500 14 30 250 0.50 -55 to 150 C Amps Volts Watts C/W Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts 500 4 25 A (I D(ON) = 7A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 7A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 250 100 3.3 3 5.5 8 5 nA mhos Volts 7-2003 050-5966 Rev D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP ARF460A/B MAX UNIT 1200 150 60 7 6 20 4.4 1400 300 100 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 40.68 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 150W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 5000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) Ciss 1000 500 Coss Crss 100 50 15 10 5 0 30 NOT UPDATED 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 10 .1 .5 1 5 10 50 150 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 16 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 56 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 100uS 12 10 5 1mS 8 10mS 1 .5 TC =+25C TJ =+150C SINGLE PULSE .1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area 100mS DC 7-2003 4 TJ = +125C TJ = -55C 050-5966 Rev D TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics ARF460A/B 1.2 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 25 VGS=15 & 10V 20 9V 1.1 8V 15 7V 10 6.5V 6V 5 5.5V 5V 4.5V 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature 0.60 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 10-4 0 , THERMAL IMPEDANCE (C/W) Note: PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC Z JC 0 10-5 SINGLE PULSE 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration RC MODEL Junction temp. ( "C) 0.0284 0.00155F 1.0 Power (Watts) 0.165 0.00934F 0.307 Case temperature 0.128F Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 Zin () 20.9 - j 9.2 2.4 - j 6.8 .57 - j 2.6 .31 - j 0.5 .44 + j 1.9 ZOL () 38 - j 2.6 31 - j 14 19.6 - j 17.6 12.5 - j 15.8 6.0 - j 10.5 7-2003 050-5966 Rev D Zin - Gate shunted with 25!! IDQ = 100mA ZOL - Conjugate of optimum load for 150 Watts output at Vdd = 125V ARF460A/B L4 Bias 0 - 12V RF Input + C6 R1 C7 L3 C9 C8 + 125V - C2 L1 R2 C1 DUT L2 C4 C5 C3 40.68 MHz Test Circuit C1 -- 2000 pF 100V NPO chip mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C6-C8 -- .1 F 500V ceramic chip C9 -- 2200 pF 500V chip RF L1 -- 4t #20 AWG .25"ID .3 "L ~80nH Output L2 -- 6t #16 AWG .312" ID .4"L ~185nH L3 -- 15t #24 AWG .25"ID ~.85uH L4 -- VK200-4B ferrite choke 3uH R1-R2 -- 51 Ohm 0.5W Carbon DUT = ARF460A/B TO-247 Package Outline Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF - A ARF - B Gate Drain Source Source Drain Gate 050-5966 Rev D 7-2003 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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